Structure of a silicon carbide film synthesized by r.f. reactive ion plating
- 1 January 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 40, 309-317
- https://doi.org/10.1016/0040-6090(77)90132-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959