Sputtering observations during binary alloy production by ion implantation
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 179-185
- https://doi.org/10.1016/0029-554x(81)90686-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A method for determining depth profiles of transition elements in steelsNuclear Instruments and Methods, 1980
- Implant ion collection in the presence of radiation enhanced diffusion and preferential sputtering of implantRadiation Effects, 1979
- Model calculations of profiles and dose of high dose ion implants influenced by sputteringNuclear Instruments and Methods, 1976
- Model calculation of ion collection in the presence of sputteringRadiation Effects, 1976
- Concentration profiles and sputtering yields measured by optical radiation of sputtered particlesRadiation Effects, 1976
- The spatial distribution of ions implanted into solids subject to diffusion and surface sputteringRadiation Effects, 1975
- The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysisSurface Science, 1974
- Depth distributions of implanted atoms under the influence of surface erosion and diffusionRadiation Effects, 1973
- Implantation profiles modified by sputteringRadiation Effects, 1973
- Anomalously high collection of copper ions implanted in aluminiumPhysica Status Solidi (a), 1971