Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate
- 1 January 2010
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 46 (14), 1011-1012
- https://doi.org/10.1049/el.2010.1485
Abstract
Thermal reliability of nickel (Ni) and copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Though the current-voltage characteristics of as-deposited Cu gate AlGaN/GaN HEMTs is superior to those of Ni gate AlGaN/GaN HEMTs, severe degradation was observed after aging at 220°C. This instability problem should be carefully taken into account in practical applications of Cu gate AlGaN/GaN HEMTs.Keywords
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