Low Temperature Growth of ZnSe/GaAs Using Post-Heated Molecular Beams
- 1 June 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (6A), L1042
- https://doi.org/10.1143/jjap.30.l1042
Abstract
MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100°C using the molecular beams post-heated at 600°C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150°C showed the strong I2 bound exciton line and almost no other luminescence such as donor-acceptor pair, Y, S and deep emission at 4 K.Keywords
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