Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium
- 26 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (9), 848-850
- https://doi.org/10.1063/1.102681
Abstract
Growth of high quality ZnSe films has been achieved at growth temperatures as low as 150 °C by using elemental zinc and thermally cracked selenium as source materials. Crystallinity of the films was determined by the Zn/Se flux ratio rather than by the growth rate; it was possible to grow good crystalline films at growth rates from 0.5 to 1 μm/h. Photoluminescence and x-ray measurements indicated that there is little degradation in the film quality as the growth temperature is lowered from 350 to 150 °C.Keywords
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