Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
- 10 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19), 1245-1247
- https://doi.org/10.1063/1.97427
Abstract
Low‐temperature excitation and photoluminescence spectra are described for single GaAs/Al0.37Ga0.63As quantum wells grown by molecular beam epitaxy with and without a 2‐min interruption of growth at the heterointerfaces. The spectra from samples grown with interruption include well‐resolved multiple sharp peaks which are due to changes in well thickness of one monolayer and to bound excitons. These peaks are as narrow as 1.0, 1.7, and 6.0 meV for single wells of width 57, 28, and 17 Å, respectively.Keywords
This publication has 16 references indexed in Scilit:
- Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxySurface Science, 1986
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruptionJournal of Vacuum Science & Technology B, 1986
- Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wellsApplied Physics Letters, 1986
- Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperatureApplied Physics Letters, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopyApplied Physics Letters, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983