Trench isolation for 0.45 μm active pitch and below
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 679-682
- https://doi.org/10.1109/iedm.1995.499310
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The current-carrying corner inherent to trench isolationIEEE Electron Device Letters, 1993
- Characterization of polysilicon-encapsulated local oxidationIEEE Transactions on Electron Devices, 1992
- Three-dimensional analysis of subthreshold swing and transconductance for fully-recessed-oxide (trench) isolated 1/4- mu m-width MOSFETsIEEE Transactions on Electron Devices, 1988