Electrophysical properties of non-doped epitaxial GaAs in the range from 10 to 1100°K
- 16 September 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (1), 311-321
- https://doi.org/10.1002/pssa.2210250130
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electrical Properties of-Type Epitaxial GaAs at High TemperaturesPhysical Review B, 1972
- Behaviors and Doping Kinetics of Residual Impurities in Epitaxial n-GaAs LayersJapanese Journal of Applied Physics, 1971
- Interface study in epitaxial vapour grown GaAsJournal of Crystal Growth, 1971
- Silicon-Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site DistributionJournal of Applied Physics, 1969
- Electroreflectance of impurities in GaAs: Manganese, silicon and cadmiumSolid State Communications, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDECanadian Journal of Physics, 1967
- Shallow donor levels and high mobility in epitaxial gallium arsenideSolid State Communications, 1966
- Influence of Vapor Composition on the Growth Rate and Morphology of Gallium Arsenide Epitaxial FilmsJournal of the Electrochemical Society, 1964
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958