Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5R)
- https://doi.org/10.1143/jjap.25.667
Abstract
The characteristics of the lateral solid-phase-epitaxial (L-SPE) growth of undoped and P-doped amorphous Si (a-Si) films on SiO2 patterns formed in various directions on (100) and (110)Si substrates were investigated. It was found that (1) the L-SPE growth length becomes a minimum in directions such that {111} facet planes can be formed parallel to the SiO2 pattern edge and (2) the growth rates in these directions are constant. It was also found that the growth rates in other directions are faster in the initial stages of L-SPE, but decrease with the annealing time and reach the same saturated value as the above constant rate. The L-SPE growth rates were also compared with the growth rate of polycrystalline grains in P-doped a-Si films.Keywords
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