Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealing
- 1 May 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2847-2849
- https://doi.org/10.1063/1.332275
Abstract
A single-crystalline silicon-on-insulator structure has been fabricated with solid-phase lateral epitaxy. Chemical-vapor-deposited amorphous silicon (CVD a-Si) deposited on a SiO2 stripe is crystallized by furnace annealing. A new CVD technique (clean CVD) has met the conditions required for solid-phase epitaxy; clean interface and reduction of impurities and microcrystallites in the a-Si film. In the case of a 4-μm-wide SiO2 stripe parallel to the 〈100〉 direction, the entire deposited layer grows epitaxially by low-temperature furnace annealing (550∼650 °C). In the case of a 10-μm-wide SiO2 stripe, the whole surface region also grows epitaxially, although the deep region partially becomes polycrystalline in areas distant from the open substrate surface. The grown-layer crystallinity is improved by subsequent high-temperature annealing.Keywords
This publication has 7 references indexed in Scilit:
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline SiJapanese Journal of Applied Physics, 1982
- Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substratesApplied Physics Letters, 1982
- Laser-induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulationApplied Physics Letters, 1982
- Metal-oxide-semiconductor field-effect transistors fabricated in laterally seeded epitaxial Si layers on SiO2Applied Physics Letters, 1982
- Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon SubstrateJapanese Journal of Applied Physics, 1982
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977