Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperature
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19), 1899-1901
- https://doi.org/10.1063/1.101235
Abstract
We have observed for the first time negative differential resistance at room temperature in a single-barrier tunneling heterostructure. A typical InAs/AlGaSb/InAs structure exhibits a current peak of 2.1×103 A cm−2 at 0.28 V and a peak to valley ratio of 1.6:1. We attribute the observation of room-temperature negative differential resistance to the favorable band alignment in the AlGaSb/InAs material system, which appears promising for device applications of single-barrier tunneling.Keywords
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