Extension of lasing wavelengths beyond 0.87 μm in GaAs/AlxGa1−xAs double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy

Abstract

We demonstrate that the lasing wavelengths of GaAs/Al_xGa_1−xAs double‐heterostructure (DH) lasers can be extended beyond 0.87–0.94 μm without significant increase in the current threshold by incorporating In into the GaAs active layer during molecular beam epitaxy. This shift permits the benefits of reduced optical fiber loss and wavelength multiplexing with 0.83 μm and using the same fibers. A reduction in averaged current‐threshold density (from 800 to 700 A/cm²) was obtained in those InGaAs/AlGaAs DH lasers that have the InGaAs active layer exactly lattice‐matched to the AlGaAs cladding layers. As a result of the stress relief at the lattice‐matched InGaAs/AlGaAs interfaces of these DH lasers, it may be possible to improve the reliability of the lasers operating at 0.88 μm.