Neutron Activation Measurements of As and Ga Loss During Transient Annealing of Gaas
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient annealing of selenium-implanted gallium arsenide using a graphite strip heaterApplied Physics Letters, 1982
- Activation of low dose silicon implants in GaAs by multiply scanned electron beamsElectronics Letters, 1980
- A device for laser beam diffusion and homogenisationJournal of Physics E: Scientific Instruments, 1979
- Ohmic contacts produced by laser-annealing Te-implanted GaAsApplied Physics Letters, 1978