Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24), 1678-1680
- https://doi.org/10.1063/1.96803
Abstract
We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1−xAs/GaAs with x≊0.2. With modulation doping, 4 K mobilities of ∼3×104 cm2/V s have been achieved. This value is near that attained for electrons in comparable structures, illustrating the enhanced transport possible due to the strain-induced light-hole planar mass.Keywords
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