The dependence of low‐temperature ion mixing of Y/Si bilayers on nuclear energy deposition
- 1 June 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (11), 7528-7532
- https://doi.org/10.1063/1.348929
Abstract
Bilayers of yttrium and amorphous silicon were irradiated with 600‐keV Ar++, Kr++, and Xe++ ions at temperatures between 80 and 372 K. The mixing rates were considerably larger than rates predicted by a model based on overlapping thermal spikes, as well as predictions generated by an extension of the model to the case of nonoverlapping thermal spikes. However, the experimental mixing rates did exhibit a linear dependence on the nuclear energy deposited at the interface. This agrees qualitatively with the premise of nonoverlapping thermal spikes. We compare our results with other ion‐mixed medium‐Z, metal/metal systems which also show this tendency.Keywords
This publication has 15 references indexed in Scilit:
- Do thermal spikes contribute to the ion-induced mixing of Ni into Zr, Ti, and Pd?Applied Physics Letters, 1990
- Low-temperature ion mixing of yttrium and siliconJournal of Applied Physics, 1990
- Low temperature ion beam mixing of bilayers and multilayers in the Ti-Cu systemApplied Physics A, 1990
- Room temperature ion beam mixing of aluminum with titanium hydrideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ion beam mixing: Basic experimentsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- When is thermodynamics relevant to ion-induced atomic rearrangements in metals?Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Technique for profiling 1H with 2.5-MeV Van de Graaff acceleratorsApplied Physics Letters, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979