Monte Carlo Study of High-Energy Electrons in Silicon Dioxide
- 18 March 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (11), 1189-1191
- https://doi.org/10.1103/physrevlett.54.1189
Abstract
A Monte Carlo study of high-field electronic transport in silicon dioxide is undertaken. Contrary to previous theoretical studies, we do not model the electronic structure by a single free-electron-like band. Our model accounts for a set of satellite valleys which contribute density of states needed for effective scattering at a few electronvolts. We find that the electronic distribution is stable for fields on the order of 10 MV/cm.Keywords
This publication has 15 references indexed in Scilit:
- Monte Carlo Solution to the Problem of High-Field Electron Heating in SiPhysical Review Letters, 1984
- Strong Electric Field Heating of Conduction-Band Electrons in SiPhysical Review Letters, 1984
- Light Emission from Electron-Injector StructuresPhysical Review Letters, 1983
- Monte-Carlo Studies of the Electron Mobility in SiO2Physica Status Solidi (a), 1982
- Electron transport and breakdown in SiO2Journal of Applied Physics, 1979
- One-electron energy bands of silicon dioxide in the ideal-cristobalite structurePhysical Review B, 1978
- Electronic energy-band structure of α quartzPhysical Review B, 1978
- Electron transport at high fields in a-SiO2Applied Physics Letters, 1975
- Calculation of electric field breakdown in quartz as determined by dielectric dispersion analysisJournal of Applied Physics, 1972
- Velocity Acquired by an Electron in a Finite Electric Field in a Polar CrystalPhysical Review B, 1970