The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Devices
- 1 January 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 20 (6), 280-287
- https://doi.org/10.1109/tns.1973.4327408
Abstract
The radiation sensitivity of MIS capacitors with pyrohydrolytic A12O3 insulators has been investigated for X-irradiation at 300 and 80K. Both X-rays and light of various photon energies were used to vary the populations of electron and hole traps inherent in the "as prepared" films. The energies of the trapping levels have been determined and the spatial distribution of the electron traps within the oxide estimated. These traps together with an SiOx layer at the semiconductor-oxide interface are shown to control the device behavior under ionizing radiation.Keywords
This publication has 4 references indexed in Scilit:
- Trap structure of pyrolytic Al2O3 in MOS capacitorsApplied Physics Letters, 1973
- Charge Injection in MAOS SystemsJournal of the Electrochemical Society, 1971
- Spectrally resolved photo depopulation of electron trapping defects in amorphous silica filmsSolid State Communications, 1970
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966