Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz

Abstract

In this letter we report on high-frequency measurements on vertically standing III−V nanowire wrap-gate MOSFETs (metal−oxide−semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f_t, extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f_max, is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.