Investigations of crystallinity and residual stress of cubic boron nitride films by Raman spectroscopy
- 23 January 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (7), 073201
- https://doi.org/10.1103/physrevb.63.073201
Abstract
With a spatial correlation model, a simple method was established to evaluate the crystallinity and stress of cubic boron nitride (cBN) films from the variation of linewidth and peak shift of Raman spectra. An increase of crystallinity and a decrease of stress of the cBN films with growth time were demonstrated. As a reference, the Raman spectra of cBN single crystals synthesized by a high-pressure, high-temperature method were also investigated. Our cBN film deposited for 1 h revealed a low stress of about 1 GPa and a comparable crystallinity to that of 4–8 μm commercially available cBN single crystals.Keywords
This publication has 22 references indexed in Scilit:
- High-rate deposition of cBN films by ion-beam-assisted vapor depositionJournal of Vacuum Science & Technology A, 1998
- Preparation of cubic boron nitride films by radio frequency bias sputteringJournal of Vacuum Science & Technology A, 1995
- Cubic boron nitride films grown by low energy B+ and N+ ion beam depositionApplied Physics Letters, 1995
- Growth of cubic boron nitride coatings in a magnetic field enhanced r.f. glow dischargeDiamond and Related Materials, 1994
- Low energy kinetic threshold in the growth of cubic boron nitride filmsApplied Physics Letters, 1994
- Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor depositionApplied Physics Letters, 1994
- Phase control of cubic boron nitride thin filmsJournal of Applied Physics, 1992
- Preparation and characterization of nanocrystalline cubic boron nitride by microwave plasma-enhanced chemical vapor depositionApplied Physics Letters, 1991
- The Microstructure of Boron Nitride Thin FilmsMaterials Science Forum, 1991
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer LayersJapanese Journal of Applied Physics, 1990