InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
- 15 September 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (6), 3911-3915
- https://doi.org/10.1063/1.354486
Abstract
High‐quality In0.22Ga0.78N/In0.06Ga0.94N superlattices were grown on GaN films with periods of 60 and 200 Å by the two‐flow metalorganic chemical‐vapor deposition method. The double‐crystal x‐ray rocking curve measurements showed satellite peaks which indicated the existence of the In0.22Ga0.78N/In0.06Ga0.94N superlattices. The quantum effects were observed through room‐temperature photoluminescence (PL) measurements. These PL spectra were compared to theoretical solutions for the In0.22Ga0.78N/In0.06Ga0.94N superlattices.Keywords
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