Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence
- 15 July 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (2), 1323-1325
- https://doi.org/10.1103/physrevb.32.1323
Abstract
The band-gap shrinkage in heavily doped n- and p-type silicon is studied by photoluminescence both at low temperatures (20 K) and at room temperature (300 K). A line-shape analysis was performed to determine the indirect band-gap energy from the emission spectra. Within the experimental accuracy the same band-gap shift is observed at room temperature as at low temperature. The present results are compared with experimental data from other optical studies and with theoretical calculations.Keywords
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