Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)
- 2 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 1055-1061
- https://doi.org/10.1016/s0039-6028(87)80549-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- On the stability of thin epitaxial NiSi2 layers on Si (111)Superlattices and Microstructures, 1986
- Si/CoSi2/Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 gratingElectronics Letters, 1986
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxyJournal of Vacuum Science & Technology B, 1985
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980