Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4), 849-858
- https://doi.org/10.1016/0022-0248(90)90814-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Tunnelling spectroscopy of CdxHg1−xTe detectorsJournal of Crystal Growth, 1985
- Performance of PV HgCdTe arrays for 1-14-µm applicationsIEEE Transactions on Electron Devices, 1982
- Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristicsInfrared Physics, 1980
- Liquid phase epitaxial growth of CdTe/Hg1−xCdxTe multilayers (0.3<x<0.5)Journal of Applied Physics, 1980
- Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodesIEEE Transactions on Electron Devices, 1980
- LPE growth of Hg0.60Cd0.40Te from Te-rich solutionApplied Physics Letters, 1979
- Excess and Hump Current in Esaki DiodesJournal of Applied Physics, 1961
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960