Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Abstract
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for laterally ordered quantum dot arrays. GaAs(511)B is identified as the optimum high index substrate for growth of InGaAsGaAs multilayered quantum dots, demonstrating strong photoluminescence with a narrow full width at half maximum linewidth of 23meV in spite of the potential for misfit dislocations.