Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots
- 14 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (21), 213105
- https://doi.org/10.1063/1.2131198
Abstract
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for laterally ordered quantum dot arrays. GaAs(511)B is identified as the optimum high index substrate for growth of multilayered quantum dots, demonstrating strong photoluminescence with a narrow full width at half maximum linewidth of in spite of the potential for misfit dislocations.
Keywords
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