Self-interstitial enhanced carbon diffusion in silicon
- 1 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3), 268-269
- https://doi.org/10.1063/1.95167
Abstract
Out-diffusion of carbon from silicon wafers during annealing at 900 °C is observed to be enhanced by the in-diffusion of phosphorus as compared to annealing in a nitrogen ambient. This diffusion enhancement is suggested to be due to phosphorus-induced silicon self-interstitials and an appreciable diffusion component of carbon in silicon involving self-interstitials.Keywords
This publication has 10 references indexed in Scilit:
- Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in siliconApplied Physics Letters, 1984
- Silicon self-interstitial supersaturation during phosphorus diffusionApplied Physics Letters, 1983
- On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconApplied Physics A, 1983
- Carbon in silicon: Properties and impact on devicesSolid-State Electronics, 1982
- Oxidation‐Induced Point Defects in SiliconJournal of the Electrochemical Society, 1982
- Retardation of Sb Diffusion in Si during Thermal OxidationJapanese Journal of Applied Physics, 1981
- Interstitial supersaturation near phosphorus-diffused emitter zones in siliconApplied Physics Letters, 1979
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- The diffusivity of carbon in siliconJournal of Physics and Chemistry of Solids, 1961