Persistent photoluminescence quenching of 0.68-eV emission in undoped semi-insulating GaAs
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 330-332
- https://doi.org/10.1063/1.94743
Abstract
The persistent photoluminescence quenching effect is shown to occur on the broad 0.68-eV emission commonly present in undoped semi-insulating GaAs bulk materials. The dependence of this persistent emission on below band-gap energy excitation has been measured. The data indicate involvement of the main deep donor EL2 in the radiative mechanism of the 0.68-eV emission. The persistent photoluminescence quenching effect can be explained by the presence of both normal and metastable states of EL2.Keywords
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