Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4B), L683
- https://doi.org/10.1143/jjap.30.l683
Abstract
The initial stages of GaAs films on porous Si grown by molecular beam epitaxy (MBE) have been investigated using reflection high-energy electron diffraction and ultraviolet photoemission spectroscopy. We found that the surface morphology of porous Si layers was deteriorated by annealing both with and without arsenic exposure, resulting in highly microfaceted surfaces and causing large-size island formation at the initial stages of MBE growth. Such deterioration is considered to introduce numerous defects in GaAs/porous Si interfaces.Keywords
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