Electronic and optical properties of deep levels in iron-doped InAsP alloys

Abstract

The electronic and optical properties of deep levels in Fe-doped InAsP grown by organometallic vapor phase epitaxy are investigated. Two deep levels associated with Fe are observed in the alloys. From measurements of the temperature dependence of resistivity, photoluminescence, and photoconductivity, the energy levels of iron in the alloys are determined for a wide range of compositions. The variation of the positions of the Fe energy levels as a function of composition is explained in terms of the vacuum-referred binding energies.