Antireflection coatings on semiconductor laser facets using sputtered lead silicate glass
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (9), 1373-1375
- https://doi.org/10.1109/jlt.1986.1074898
Abstract
RF-sputtered lead silicate [PbO(54 m/o)-SiO2(46 m/o)] films were used to antireflection coat InGaAsP laser facets. Modal reflectivities of1-3 \times 10^{-4}were obtained.Keywords
This publication has 8 references indexed in Scilit:
- Active mode-locking characteristics of InGaAsP-single mode fiber composite cavity lasersIEEE Journal of Quantum Electronics, 1986
- Theoretical analysis and fabrication of antireflection coatings on laser-diode facetsJournal of Lightwave Technology, 1985
- Gain measurements of InGaAsP 1.5 μm optical amplifiersElectronics Letters, 1985
- High-performance single-longitudinal-mode operation of InGaAsP/InP DFB-DC-PBH LD'sJournal of Lightwave Technology, 1984
- Theoretical Design of Single-Layer Antireflection Coatings on Laser FacetsAT&T Bell Laboratories Technical Journal, 1984
- Measurement of the modal reflectivity of an antireflection coating on a superluminescent diodeIEEE Journal of Quantum Electronics, 1983
- Lateral confinement InGaAsP superluminescent diode at 1.3 µmIEEE Journal of Quantum Electronics, 1983
- Lead silicate optical coatings for GaAs-AlGaAs lasersJournal of Applied Physics, 1978