Lateral confinement InGaAsP superluminescent diode at 1.3 µm
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (1), 78-82
- https://doi.org/10.1109/jqe.1983.1071724
Abstract
No abstract availableKeywords
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