Structural Differences in Light and Heavy Ion Disorder in Si Studied by Single and Double Alignment Channeling Techniques
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SIApplied Physics Letters, 1970
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- The energy dependence and depth distribution of lattice disorder in ion-implanted siliconRadiation Effects, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967