The energy dependence and depth distribution of lattice disorder in ion-implanted silicon

Abstract

Silicon single crystals were implanted at room temperature with Xe and I ions in the energy range 20 to 150 keV and with 20 to 50 keV P ions. The lattice disorder induced by these implants was measured by a combination of the channeling and Rutherford backscattering techniques. The disorder produced by implanting I and Xe ions exhibited a similar relationship with implantation energy to that previously established for bismuth implants. The P ion implants induced less lattice disorder per incident ion in the energy range studied. Integral depth distributions of the implanted ions and of the lattice disorder were obtained by combining a layer removal technique with radiotracer implants of 110 keV ¹³³Xe and 40 keV ³²P. The depth distributions showed that in both cases the ions penetrate deeper into the crystal than the damage they produce but that the separation is significantly greater for the P implant than for the Xe implant.