Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/β-Si3N4 /Si(1 1 1) structure
- 20 January 2009
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 311 (10), 3049-3053
- https://doi.org/10.1016/j.jcrysgro.2009.01.076
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting SubstrateJapanese Journal of Applied Physics, 2007
- Radio‐frequency MBE growth of cubic GaN on 3C‐SiC(001)/Si(001) templatephysica status solidi (c), 2006
- N‐plasma assisted MBE grown GaN films on Si(111)Physica Status Solidi (b), 2006
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Initial stage of silicon nitride nucleation on Si(111) by rf plasma-assisted growthe-Journal of Surface Science and Nanotechnology, 2006
- Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/β-Si3N4(0001) double-buffer structureApplied Physics Letters, 2003
- High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammoniaApplied Physics Letters, 1999
- Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBEMaterials Science and Engineering B, 1999
- On the E - H mode transition in RF inductive dischargesJournal of Physics D: Applied Physics, 1996
- Reactive crystal growth in two dimensions: Silicon nitride on Si(111)Physical Review B, 1995