On the use of H+ and Ar+ ions for high spatial resolution depth profiling
- 1 January 1990
- Vol. 41 (4-6), 1327-1329
- https://doi.org/10.1016/0042-207x(90)93948-i
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Influence of the depth resolution on the resulting AES profiles of components in multilayer thin film structuresSurface Science, 1988
- Effect of ion bombardment during the low-mobility growth of metallic superlatticesJournal of Materials Research, 1988
- Characterization of multilayered tungsten/carbon thin films by various processesJournal of Applied Physics, 1988
- Theoretical analysis of AES depth profiling in multilayers: Application to C/W multilayersSurface Science, 1987
- Lattice Site Location of Hydrogen by Use of Extended X-Ray Absorption Fine StructurePhysical Review Letters, 1984
- Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflectionAtomic Data and Nuclear Data Tables, 1982
- Extended X-Ray—Absorption Fine Structure of Small Cu and Ni Clusters: Binding-Energy and Bond-Length Changes with Cluster SizePhysical Review Letters, 1979