Microscopic observation of Si MBE on Si(001) surface using microprobe RHEED
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 468-471
- https://doi.org/10.1016/0022-0248(89)90444-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffractionApplied Physics Letters, 1987
- UHV-REM Study of Changes in the Step Structures on Clean (100) Silicon Surfaces by AnnealingJapanese Journal of Applied Physics, 1987
- Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxyApplied Physics Letters, 1986
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffractionSurface Science, 1985
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980