Growth of ZnSe Films on InxGa1-xAs Substrate by Metalorganic Vapor Phase Epitaxy
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A), L335
- https://doi.org/10.1143/jjap.25.l335
Abstract
This letter discusses ZnSe epitaxial layers grown on lattice-matched In x Ga1-x As (x=0.032) substrates by metalorganic vapor phase epitaxy. These films emit a stronger near-bandedge photoluminescence at room temperature than ZnSe layers on GaAs substrates do when the film thickness is less than 1 µn. However, self-activated emission intensity, which has been reduced remarkably by decreasing the impurities piled up near the substrate surface, is independent of the lattice parameter of the substrate.Keywords
This publication has 8 references indexed in Scilit:
- Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1985
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVDJournal of Crystal Growth, 1984
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963
- Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-TelluridesPhysical Review B, 1957