Chemical vapor deposition of amorphous silicon prepared from SiF2 gas
- 1 May 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5), 3622-3624
- https://doi.org/10.1063/1.329096
Abstract
A new chemical vapor deposition (CVD) method for the production of amorphous silicon films from SiF2 gas is described. About 1% (atomic) fluorine is incorporated in the film, its concentration decreasing with increasing deposition temperature. Optical, electronic, and structural properties of the films are reported.Keywords
This publication has 12 references indexed in Scilit:
- Amorphous Si-F-H solar cells prepared by dc glow dischargeApplied Physics Letters, 1980
- A heat-resisting new amorphous siliconApplied Physics Letters, 1980
- Influence of halides on the photoconductivity dark conductivity and photoluminescence of a-Si:HJournal of Non-Crystalline Solids, 1980
- Influence of alkaali and halogen implantation on electrical properties of amorphous siliconJournal of Non-Crystalline Solids, 1980
- Properties of amorphous Si:F:H alloysJournal of Non-Crystalline Solids, 1980
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Negative-States in the Gap in Hydrogenated Amorphous SiliconPhysical Review Letters, 1978
- A general expression for the thermoelectric powerSolid State Communications, 1971