Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum well lasers (λ∼910 nm)
- 6 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (10), 913-915
- https://doi.org/10.1063/1.100806
Abstract
The stability of strained‐layer Aly Ga1−yAs‐GaAs‐InxGa1−x As single quantum well heterostructures against thermal processing is examined using transmission and scanning electron microscopy. A self‐aligned impurity‐induced layer disordering process employing Si‐O diffusion is used to produce buried heterostructure stripe geometry lasers with a pseudomorphic InxGa1−x As quantum well active region. The 2‐μm‐wide stripe laser diodes exhibit high efficiency (η∼41%/facet), low threshold (Ith =7 mA), and high output power (Pout >20 mW/facet).Keywords
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