Elimination of Forming Process for TiOx Nonvolatile Memory Devices
- 27 May 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (7), 763-765
- https://doi.org/10.1109/led.2009.2021003
Abstract
This letter studies the physical mechanism for the high-voltage forming process that is required before a TiOx resistance-change memory device can be set and reset repeatedly. A new in situ fabrication process has been developed and demonstrated to eliminate the high-voltage forming.Keywords
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