Characterization and properties of controlled nucleation thermochemical deposition (CNTD)-silicon carbide
- 1 September 1980
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 15 (9), 2183-2191
- https://doi.org/10.1007/bf00552305
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Chemical Vapor Deposition of Silicon NitrideJournal of the Electrochemical Society, 1976
- Oxidation of Si3N4 in the Range 1300° to 1500°CJournal of the American Ceramic Society, 1976
- The High-Temperature Oxidation of Hot-Pressed Silicon CarbidePublished by Springer Nature ,1975