Photoemission Measurements of Step-Dependent Surface States on Cleaved Silicon (111)
- 7 April 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (14), 874-877
- https://doi.org/10.1103/physrevlett.34.874
Abstract
Ultraviolet photoemission spectroscopy has been used to measure surface states on cleaved silicon with varying step-atom densities determined by low-energy-electron diffraction. For high step densities (∼ 10%) a new surface-state peak is found at an energy 0.4 eV higher than the main surface-state peak. These measurements are the first demonstration that surface-state photoemission spectra depend strongly on cleavage steps.Keywords
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