A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4), 299-304
- https://doi.org/10.1016/0167-9317(87)90053-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A statistical analysis of ultraviolet, x-ray, and charged-particle lithographiesJournal of Vacuum Science & Technology B, 1986
- Influence of absorber stress on the precision of x-ray masksJournal of Vacuum Science & Technology B, 1986
- Submicron patterns formed by reactive ion etchingMicroelectronic Engineering, 1985
- Heating and temperature-induced distortions of silicon x-ray masksJournal of Vacuum Science & Technology B, 1983
- Silicon nitride single-layer x-ray maskJournal of Vacuum Science and Technology, 1982