Hydrogen Evolution from Amorphous Si–N Films

Abstract

Hydrogen evolution experiments were carried out for a–Si_1-x N _x :H films prepared by glow discharge decomposition. The H content increases with increasing N content in the range of x<0.4, accompanying a large change in the oscillator strength for Si–H IR wagging mode absorption. The ratio of the content of hydrogen evolved at low temperature to the content of hydrogen evolved at high temperature increases with the N content, suggesting that the structure becomesvoid-rich.