Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formation
- 1 January 1985
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 20 (8), 569-574
- https://doi.org/10.1051/rphysap:01985002008056900
Abstract
The use of trimethylarsenic(TMAs) in place of arsine in metal organics vapour phase epitaxy (MOVPE) of GaAs gives samples with high residual doping (∼ 1017 cm-3). Raman spectroscopy shows that a rather stable solid is formed between trimethylgallium (TMG) and AsH3, whereas no adduct is formed between TMG and TMAs. This feature could explain the high density of residual carbon when using TMAs in MOVPE of GaAsKeywords
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