Extremely high electron mobility in a GaAs-GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
- 31 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (5), 457-459
- https://doi.org/10.1063/1.101851
Abstract
On studying the magnetoresistivity of GaAs‐GaInP heterostructures grown by low‐pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid‐helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm−2. This high electron mobility is confirmed by cyclotron resonance measurements.Keywords
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