Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A), L429
- https://doi.org/10.1143/jjap.25.l429
Abstract
We report the first growth of selectively doped n-GaInP/GaAs heterostructures by low pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium, triethylgallium, phosphine and arsine as source materials. The Shubnikov-de Haas oscillation and the temperature dependence of electron mobility indicate that a two-dimensional electron gas is present at the GaInP/GaAs interface. It is noted that the persistent photoconductivity observed in these heterostructures was very weak. These results suggest potential application of this material system to high electron mobility transistors (HEMT).Keywords
This publication has 10 references indexed in Scilit:
- Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1986
- A Simple Calculation of the DX Center Concentration Based on an L-Donor ModelJapanese Journal of Applied Physics, 1985
- Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructuresApplied Physics Letters, 1984
- High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
- Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunctionSolid State Communications, 1984
- Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputersIEEE Transactions on Electron Devices, 1984
- Modulation-doped field-effect transistor based on a two-dimensional hole gasApplied Physics Letters, 1984
- Instabilities in modulation doped field-effect transistors (MODFETs) at 77 KElectronics Letters, 1983
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977