Atomic-layer epitaxy of (100) CdTe on GaAs substrates
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4), 566-571
- https://doi.org/10.1016/0022-0248(90)90584-8
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Atomic-layer epitaxy of (111)CdTe on BaF2 substratesApplied Physics Letters, 1988
- Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxyJournal of Crystal Growth, 1988
- Summary Abstract: Epitaxial growth of ZnS and ZnSe on the low index faces of GaAs using atomic layer epitaxyJournal of Vacuum Science & Technology A, 1987
- Growth Mechanism in Atomic Layer Epitaxy (I) Re‐evaporation of Cd and Te from CdTe(111) Surfaces Monitored by Auger Electron SpectroscopyCrystal Research and Technology, 1986
- High quality CdTe epilayers on GaAs grown by hot-wall epitaxyApplied Physics Letters, 1986
- Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizationsSurface Science, 1986
- Vacancy-Buckling Model for the (2×2) GaAs(111) SurfacePhysical Review Letters, 1984
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984