Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon
- 30 April 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (4), 391-397
- https://doi.org/10.1016/0038-1101(79)90092-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Bulk and interface imperfections in semiconductorsSolid-State Electronics, 1976
- Characteristics of the indium-doped infrared sensing MOSFET(IRFET)IEEE Transactions on Electron Devices, 1976
- Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon EmissionPhysical Review Letters, 1975
- Experimental verification of operation of the indium-doped infrared-sensing MOSFETIEEE Transactions on Electron Devices, 1975
- Experimental characterization of gold-doped infrared-sensing MOSFET'sIEEE Transactions on Electron Devices, 1975
- Fast transient capacitance measurements for implanted deep levels in siliconApplied Physics B Laser and Optics, 1975
- Determination of deep trap levels in silicon using ion-implantation and CV-measurementsApplied Physics A, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970