Microstructural characterization of high-efficiency Cu(In,Ga)Se2 solar cells
- 1 December 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 49 (1-4), 249-260
- https://doi.org/10.1016/s0927-0248(97)00201-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Chemical and Structural Characterization of Cu(In,Ga)Se2/Mo Interface in Cu(In,Ga)Se2 Solar CellsJapanese Journal of Applied Physics, 1996
- Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition MonitorJapanese Journal of Applied Physics, 1995
- Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cellProgress In Photovoltaics, 1994
- Growth defects in CuInSe2 thin filmsJournal of Materials Research, 1994
- Fivefold multiply twinned crystallites in CuInSe2Applied Physics Letters, 1994
- ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceApplied Physics Letters, 1993
- Microstructure of polycrystalline CuInSe2/Cd(Zn)S heterojunction solar cellsThin Solid Films, 1992
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenidePhilosophical Magazine A, 1991
- High photocurrent polycrystalline thin-film CdS/CuInSe2 solar cellaApplied Physics Letters, 1980