Platinum silicide ohmic contacts to shallow junctions in silicon
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12), 8856-8862
- https://doi.org/10.1063/1.330439
Abstract
Ohmic contact to shallow pn+ and np+ junctions in silicon were studied. Thin layers (∼200 Å) of platinum were sputter deposited and reacted with the silicon substrate at 590 °C to result in the stable PtSi silicide. In a self-registered process, aqua regia was used to etch the unreacted platinum. An Al-0.9% Si alloy has been used for final metallization. A small contact area of 3×3 μm2 was chosen so as to be in accordance with the current level of integration. A four-terminal Kelvin-resistor structure has been utilized to accurately measure the contact resistance. The effect due to the dopant concentration was studied at the implant dose range of 1–8×1015 cm−2. Van der Pauw sheet resistance measurements, secondary ion mass spectroscopy, and Rutherford backscattering experiments were all performed in order to characterize the shallow junctions and the silicide-silicon interface. Predeposition and in-situ etching resulted in considerable improvement in the measured specific contact resistance. Values well within the range required for very large scale integration applications were obtained.Keywords
This publication has 32 references indexed in Scilit:
- Al‐0.9% Si/Si Ohmic Contacts to Shallow JunctionsJournal of the Electrochemical Society, 1982
- Thermal study of the Pt-Al reaction and its effects on contact resistance to siliconJournal of Applied Physics, 1982
- Electrical Properties of Platinum-Silicon Contact Annealed in an H2AmbientJapanese Journal of Applied Physics, 1978
- A model of ohmic contacts to semiconductorsSolid-State Electronics, 1975
- The nature of barrier height variations in alloyed Al-Si Schottky barrier diodesSolid-State Electronics, 1975
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- Electrical and mechanical features of the platinum silicide-aluminum reactionJournal of Applied Physics, 1973
- Behavior of AlSi Schottky barrier diodes under heat treatmentSolid-State Electronics, 1973
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Structure of Evaporated PtSi on SiJournal of Vacuum Science and Technology, 1970